?2007 fairchild semiconductor corporation 1 www.fairchildsemi.com fqa7n80c_f109 rev. a fqa7n80c_f109 800v n-channel mosfet september 2007 qfet ? fqa7n80c_f109 800v n-channel mosfet features ? 7.0a, 800v, r ds(on) = 1.9 ? @v gs = 10 v ? low gate charge ( typical 27nc) ? low crss ( typical 10pf) ?fast switching ? 100% avalanche tested ? improved dv/dt capability ? rohs compliant description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. absolute maximum ratings thermal characteristics d g s gs d to-3pn fqa series symbol parameter fqa7n80c_f109 units v dss drain-source voltage 800 v i d drain current - continuous (t c = 25c) 7.0 a - continuous (t c = 100c) 4.4 a i dm drain current - pulsed (note 1) 28.0 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 580 mj i ar avalanche current (note 1) 7.0 a e ar repetitive avalanche energy (note 1) 30 mj dv/dt peak diode recovery dv/dt (note 3) 4.0 v/ns p d power dissipation (t c = 25c) 198 w - derate above 25c 1.75 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 c symbol parameter typ max units r jc thermal resistance, junction-to-case -- 0.63 c / w r cs thermal resistance, case-to-sink 0.24 -- c / w r ja thermal resistance, junction-to-ambient -- 40 c / w
2 www.fairchildsemi.com fqa7n80c_f109 rev. a fqa7n80c_f109 800v n-channel mosfet package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 22.2mh, i as =7.0a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 8.4a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature device marking device package reel size tape width quantity fqa7n80c fqa7n80c_f109 to-3pn -- -- 30 symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 800 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.93 -- v/c i dss zero gate voltage drain current v ds = 800 v, v gs = 0 v -- -- 10 a v ds = 640 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a3.0--5.0v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 3.5 a -- 1.57 1.9 ? g fs forward transconductance v ds = 50 v, i d = 3.5 a (note 4) -- 5.6 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 1290 1680 pf c oss output capacitance -- 120 155 pf c rss reverse transfer capacitance -- 10 13 pf switching characteristics t d(on) turn-on delay time v dd = 400 v, i d = 6.6a, r g = 25 ? (note 4, 5) -- 35 80 ns t r turn-on rise time -- 100 210 ns t d(off) turn-off delay time -- 50 110 ns t f turn-off fall time -- 60 130 ns q g total gate charge v ds = 640 v, i d = 6.6a, v gs = 10 v (note 4, 5) -- 27 35 nc q gs gate-source charge -- 8.2 -- nc q gd gate-drain charge -- 11 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 7.0 a i sm maximum pulsed drain-source diode forward current -- -- 28.0 a v sd drain-source diode forward voltage v gs = 0 v, i s =7.0 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 6.6 a, di f / dt = 100 a/ s (note 4) -- 650 -- ns q rr reverse recovery charge -- 7.0 -- c
3 www.fairchildsemi.com fqa7n80c_f109 rev. a fqa7n80c_f109 800v n-channel mosfet typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs . source current and temperatue figure 5. capacitance characteristics f igure 6. gate charge characteristics 246810 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : ? 1. v ds = 50v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v notes : ? 1. 250 s pulse test 2. t c = 25 ? i d , drain current [a] v ds , drain-source voltage [v] 0.20.40.60.81.01.21.4 10 -1 10 0 10 1 150 ? notes : ? 1. v gs = 0v 2. 250 s pulse test 25 ? i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 3 6 9 12 15 18 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs = 20v v gs = 10v note : t ? j = 25 ? r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 10 -1 10 0 10 1 0 500 1000 1500 2000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : ? 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 5 10 15 20 25 30 0 2 4 6 8 10 12 v ds = 400v v ds = 160v v ds = 640v note : i ? d = 6.6a v gs , gate-source voltage [v] q g , total gate charge [nc]
4 www.fairchildsemi.com fqa7n80c_f109 rev. a fqa7n80c_f109 800v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : ? 1. v gs = 10 v 2. i d = 3.3 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : ? 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : ? 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 2 4 6 8 i d , drain current [a] t c , case temperature [ ] ? 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n otes : ? 1. z jc (t) = 0.63 /w m ax. ? 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) sing le p ulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , s quare w ave p ulse d uration [sec] t 1 p dm t 2
5 www.fairchildsemi.com fqa7n80c_f109 rev. a fqa7n80c_f109 800v n-channel mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
6 www.fairchildsemi.com fqa7n80c_f109 rev. a fqa7n80c_f109 800v n-channel mosfet peak diode recovery dv/dt test circuit & waveforms
7 www.fairchildsemi.com fqa7n80c_f109 rev. a fqa7n80c_f109 800v n-channel mosfet mechanical dimensions to-3pn dimensions in millimeters
8 www.fairchildsemi.com fqa7n80c_f109 rev. a fqa7n80c_f109 800v n-channel mosfet trademarks the following are registered and unregistered tr ademarks and service marks fairchild semi conductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make ch anges without further notice to any products herein to improve reliability, function, or design. fa irchild does not assume any liability arising out of the application or use of any product or circuit descri bed herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty ther ein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support devices or systems without the express writ ten approval of fairchild semiconductor corporation. as used herein: 1. life support devices or sy stems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component in any component of a life support, device, or system whose fail ure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? crossvolt ? ctl? current transfer logic? ecospark ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fps? frfet ? global power resource sm green fps? green fps? e-series? gto? i-lo ? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motion-spm? optologic ? optoplanar ? ? pdp-spm? power220 ? power247 ? poweredge ? power-spm? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? unifet? vcx? ? datasheet identification product status definition advance information formative or in design this datasheet contains the desi gn specifications for product development. specifications may c hange in any manner without notice. preliminary first production this datasheet contains preliminary data; supplementary data will be pub- lished at a later date. fairchild semi conductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains fi nal specifications. fairch ild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains s pecifications on a product that has been discontin- ued by fairchild semiconductor. the datasheet is printed for reference infor- mation only. rev. i31
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